宽禁带半导体氮化镓等材料中缺陷光学、电学特性的第一性原理计算;半导体材料电催化、光催化机理的第一性原理计算;拓扑材料中缺陷对拓扑性质的作用研究。
2019-08 至 2021-08, 南方科技大学,物理系,博士后
2014-09 至 2019-06, 哈尔滨工业大学, 凝聚态物理专业, 博士
2017-03 至 2018-02, 帝国理工学院,材料系,访问学生
2015-09 至 2016-08, 伦敦大学学院,化学系,CSC联培博士生
2012-09 至 2014-07, 哈尔滨工业大学, 凝聚态物理专业, 硕士
2008-08 至 2012-07, 哈尔滨工业大学, 光信息科学与技术专业, 学士
1.Z. J. Chen, Z. J. Xie, Y. J. Jin, G. Liu, and H. Xu, Hybrid nodal-ring phonons with hourglass dispersion in AgAlO2, Phys. Rev. Materials 6, 034202 (2022) (共同一作)
2.Z. Xie, X. Huang, Z. Zhang, H. Xu, Identification of electronic descriptor for catalytic activity of transition-metal and non-metal doped MoS2, Physical Chemistry Chemical Physics 23, 15101(2021) (2021 HOT PCCP article)
3.Z. Xie, Y. Sui, J. Buckeridge, A. A. Sokol, T. W. Keal, A. Walsh, Prediction of multiband luminescence due to the gallium vacancy–oxygen defect complex in GaN, APPLIED PHYSICS LETTERS 112, 262104 (2018)
4.Z. Xie, Y. Sui, J. Buckeridge, C. R. A. Catlow, T. W. Keal, P. Sherwood, A. Walsh, M. R. Farrow, D. O. Scanlon, S. M. Woodley, A. A. Sokol, Donor and acceptor characteristics of native defects in GaN, Journal of Physics D: Applied Physics 52, 335104 (2019)
5.Z. Xie, Y. Sui, J. Buckeridge, C. R. A. Catlow, T. W. Keal, P. Sherwood, A. Walsh, D. O. Scanlon, S. M. Woodley, A. A Sokol, Demonstration of the donor characteristics of Si and O defects in GaN using hybrid QM/MM, PHYSICA STATUS SOLIDI A 214, 1–5 (2017)
6.Z. Xie, Y. Sui, Y. Wang, X. Wang, Y. Wang, Z. Liu, B. Li, Y. Bai, Z. Wang, Modulation of Void Motion Behavior in a Magnetized Dusty Plasma, Chinese Physics Letters 33, 015201 (2016)
7.W. Xu, Z. Xie, J. Su, R. Wang, X. Wu, and H. Xu, High Anisotropic Optoelectronics in Two Dimensional Layered PbSnX2 (X = S/Se). J. Phys. Chem. Lett. 12, 10574–105802021 (2021)
8. Y. Wu, Z. Xie, Y. Yi, Z. Lv, L. Xu, In-situ self-reconstruction of Ni-Fe-Al hybrid phosphides nano sheet arrays enables efficient oxygen evolution in alkaline, International Journal of Hydrogen Energy 46, 25070-25080 (2021)